PART |
Description |
Maker |
MUX08 MUX08BRC_883 MUX08S MUX-08 MUX-08AQ MUX-08BQ |
JFET SWITCH RATHER THAN CMOS 8-Chan/dual 4-Chan JFET Analog Multiplexers(Overvoltage & Power Supply loss Protected) 8-CHANNEL, SGL ENDED MULTIPLEXER, CDIP16 8-Chan/dual 4-Chan JFET Analog Multiplexers(Overvoltage & Power Supply loss Protected) 8-CHANNEL, SGL ENDED MULTIPLEXER, PDIP16 ID ISC.LRMU1000-A-FCC UHF READER Tools, Tips Soldering; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes RoHS Compliant: Yes 8-Chan/Dual 4-Chan JFET Analog Multiplexers (Overvoltage & Power Supply Loss Protected) 8-Channel Analog Multiplexer 4-Channel Analog Multiplexer 8-Chan/dual 4-Chan JFET Analog Multiplexers(Overvoltage & Power Supply loss Protected)
|
ANALOG DEVICES INC Analog Devices, Inc. AD[Analog Devices]
|
K4S643232F-TP60 K4S643232F-TP70 K4S643232F- K4S643 |
2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL3.3V -2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL3.3V CONNECTOR ACCESSORY 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL3.3V 200万32内存12k × 32 × 4银行同步DRAM LVTTL3.3V
|
Samsung Electronic SAMSUNG[Samsung semiconductor] SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
|
ITH08F06G ITH08F06 ITH08F06B |
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 14A I(C) | TO-252AA TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 14A I(C) | TO-220AB HIGH - SPEED POWERLINE N - CHANNEL IGBT
|
MITEL[Mitel Networks Corporation]
|
A63L73321E-10 A63L73321E-9.5 |
10ns 128K x 32bit synchronous high speed SRAM 9.5ns 128K x 32bit synchronous high speed SRAM
|
AMIC Technology
|
FF75R10KN FF150R10KN FF100R10KN FS50R10KF2 FS8R06K |
TRANSISTOR | IGBT | N-CHAN | DUAL | 1KV V(BR)CES | 75A I(C) | M:HL093HD5.6 TRANSISTOR | IGBT | N-CHAN | DUAL | 1KV V(BR)CES | 150A I(C) | M:HL093HW048 TRANSISTOR | IGBT | N-CHAN | DUAL | 1KV V(BR)CES | 100A I(C) | M:HL093HW048 TRANSISTOR | IGBT POWER MODULE | 3-PH BRIDGE | 1KV V(BR)CES | 50A I(C) TRANSISTOR | IGBT POWER MODULE | 3-PH BRIDGE | 600V V(BR)CES | 8A I(C) 晶体管| IGBT功率模块| 3 - PH值大桥| 600V的五(巴西)国际消费电子展| 8A条一(c TRANSISTOR | IGBT | N-CHAN | DUAL | 1KV V(BR)CES | 15A I(C) | M:HL080HD5.3 晶体管| IGBT的|正陈|双| 1KV交五(巴西)国际消费电子展|5A一(c)|米:HL080HD5.3 TRANSISTOR | IGBT POWER MODULE | 3-PH BRIDGE | 600V V(BR)CES | 75A I(C) 晶体管| IGBT功率模块| 3 - PH值大桥| 600V的五(巴西)国际消费电子展| 75A条一(c
|
Delta Electronics, Inc. Fuji Electric Holdings Co., Ltd. Infineon Technologies AG
|
AKD4397-SB |
192kHz sampling 32Bit ツヒ DAC
|
Asahi Kasei Microsystems
|
MN103S97N |
Microcomputer - 32bit - General Purpose
|
Panasonic
|
HY5V22GF HY5V22GF-H HY5V22GF-P |
4 Banks x 1M x 32Bit Synchronous DRAM
|
Hynix Semiconductor
|
MN103S83D |
Microcomputer - 32bit - General Purpose
|
Panasonic
|
M52S32321A-7.5BIG M52S32321A-10BIG M52S32321A-6BIG |
512K x 32Bit x 2Banks Synchronous DRAM
|
Elite Semiconductor Memory Technology Inc.
|
T436432B-5S T436432B-55S |
2M x 32 SDRAM 512K x 32bit x 4Banks Synchronous DRAM
|
Taiwan Memory Technology
|
T436432B-7SG T436432B-55SG T436432B-5SG T436432B-6 |
2M x 32 SDRAM 512K x 32bit x 4Banks Synchronous DRAM
|
Taiwan Memory Technology http:// Taiwan Memory Technolog...
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